About the origin and the mechanisms involved in the cracking of highly porous silicon layers under capillary stresses

O. Belmont, C. Faivre, D. Bellet, Y. Brechet

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Abstract

The effects of the capillary stresses during the drying of p+ -type porous silicon (PS) layers are reported. The cracking of the PS layers occurs for samples thicker than a critical thickness value hc. Taking into account the elastic properties of p + -type PS material, a simple model shows that hc varies as (1 - p)3 and 1/γ2LV, where p is the porosity and γLV is the surface tension of the drying liquid. A good agreement with experimental results is observed. This study leads also to a very easy and simple method which increases the hc value by a factor of about 25 when using pentane as the drying liquid (instead of water).

Original languageEnglish
Pages (from-to)219-222
Number of pages4
JournalThin Solid Films
Volume276
Issue number1-2
DOIs
Publication statusPublished - 15 Apr 1996
Externally publishedYes

Keywords

  • Elastic properties
  • Growth mechanism
  • Silicon
  • Stress

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