A tight-binding study of channel modulation in atomic-scale Si: P nanowires

Hoon Ryu, Sunhee Lee, Bent Weber, Suddhasatta Mahapatra, Michelle Yvonne Simmons, Lloyd C L Hollenberg, Gerhard Klimeck

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

Abstract

It has been well understood that ultrathin, highly P δ-doped Si (Si:P) nanowires are metallic at charge-neutrality (Ref. [5]). This work extends the scope of tight-binding modeling beyond charge-neutrality to examine the channel modulation of a 1.5nm wide, 1/4 monolayer(ML)-doped Si:P nanowire and its effect on the channel conductance. Subband-anticrossing plays a key role in the channel modulation, creating a local minimum in the ballistic conductance as the channel is occupied with more electrons. While the channel modulation causes a fluctuation in the conductance, nanowires still remain metallic boding well for their utility as potential interconnects.

Original languageEnglish
Title of host publication2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Pages77-80
Number of pages4
DOIs
Publication statusPublished - 2013
Externally publishedYes
EventInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 - Glasgow, United Kingdom
Duration: 3 Sep 20135 Sep 2013
Conference number: 18th

Conference

ConferenceInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Abbreviated titleSISPAD 2013
CountryUnited Kingdom
CityGlasgow
Period3/09/135/09/13

Cite this