A Study of the Static and Multigigabit Dynamic Effects of Gain Spectra Carrier Dependence in Semiconductor Lasers Using a Transmissionline Laser Model

Arthur James Lowery

doi:10.1109/3.14366

A Study of the Static and Multigigabit Dynamic Effects of Gain Spectra Carrier Dependence in Semiconductor Lasers Using a Transmissionline Laser Model

Arthur James Lowery

Research output: Contribution to journal › Article › Research › peer-review

6 Citations (Scopus)

Abstract

The addition of carrier diffusion and gain curve peak carrier dependence to the transmissionline laser model allows the study of both the temporal and the spectral effects of this dependence. The new model, including a photodiode model, is described and results for a static 860 nm device and an 8 Gbit/s bit-sequence modulated 1550 nm constricted-mesa device compare favorably with the numerical, analytical, and experimental data of other workers.

Original language	English
Pages (from-to)	2376-2385
Number of pages	10
Journal	IEEE Journal of Quantum Electronics
Volume	24
Issue number	12
DOIs	https://doi.org/10.1109/3.14366
Publication status	Published - 1 Jan 1988
Externally published	Yes

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A Study of the Static and Multigigabit Dynamic Effects of Gain Spectra Carrier Dependence in Semiconductor Lasers Using a Transmissionline Laser Model

Abstract

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