A Study of the Static and Multigigabit Dynamic Effects of Gain Spectra Carrier Dependence in Semiconductor Lasers Using a Transmissionline Laser Model

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Abstract

The addition of carrier diffusion and gain curve peak carrier dependence to the transmissionline laser model allows the study of both the temporal and the spectral effects of this dependence. The new model, including a photodiode model, is described and results for a static 860 nm device and an 8 Gbit/s bit-sequence modulated 1550 nm constricted-mesa device compare favorably with the numerical, analytical, and experimental data of other workers.

Original languageEnglish
Pages (from-to)2376-2385
Number of pages10
JournalIEEE Journal of Quantum Electronics
Volume24
Issue number12
DOIs
Publication statusPublished - 1 Jan 1988
Externally publishedYes

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