Abstract
A model silicon/silicon oxide interface, synthesized from the spherosiloxane H10Si10O15 and Si(100)-2×1, has been characterized by study of the Si 2p core-levels and valence band region using soft X-ray photoemission. In addition, the intact H10Si10O15 cluster was condensed at - 160°C onto Si(111)-H and characterized. The measured photoemission features are in good agreement with the results of previous model studies.
| Original language | English |
|---|---|
| Pages (from-to) | 1622-1626 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 36 |
| Issue number | 3S |
| DOIs | |
| Publication status | Published - 1 Mar 1997 |
| Externally published | Yes |
Keywords
- SiO/Si interface
- Spherosiloxane
- X-ray photoemission