Abstract
A model silicon/silicon oxide interface, synthesized from the spherosiloxane H10Si10O15 and Si(100)-2×1, has been characterized by study of the Si 2p core-levels and valence band region using soft X-ray photoemission. In addition, the intact H10Si10O15 cluster was condensed at - 160°C onto Si(111)-H and characterized. The measured photoemission features are in good agreement with the results of previous model studies.
Original language | English |
---|---|
Pages (from-to) | 1622-1626 |
Number of pages | 5 |
Journal | Japanese Journal of Applied Physics |
Volume | 36 |
Issue number | 3S |
DOIs | |
Publication status | Published - 1 Mar 1997 |
Externally published | Yes |
Keywords
- SiO/Si interface
- Spherosiloxane
- X-ray photoemission