A new model silicon/silicon oxide interface synthesized from H10Si10O15 and Si(100)-2×1

K. Z. Zhang, Leah M. Meeuwenberg, Mark M.Banaszak Holl, F. R. Mcfeely

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A model silicon/silicon oxide interface, synthesized from the spherosiloxane H10Si10O15 and Si(100)-2×1, has been characterized by study of the Si 2p core-levels and valence band region using soft X-ray photoemission. In addition, the intact H10Si10O15 cluster was condensed at - 160°C onto Si(111)-H and characterized. The measured photoemission features are in good agreement with the results of previous model studies.

Original languageEnglish
Pages (from-to)1622-1626
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number3 SUPPL. B
Publication statusPublished - 1 Mar 1997
Externally publishedYes


  • SiO/Si interface
  • Spherosiloxane
  • X-ray photoemission

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