A Ka-band GaAs MMIC traveling-wave switch with absorptive characteristic

Kim Tuyen Trinh, Hsuan Ling Kao, Hsien Chin Chiu, Nemai Chandra Karmakar

Research output: Contribution to journalArticleResearchpeer-review

Abstract

A 36-38-GHz monolithic microwave integrated circuit (MMIC) single-pole double-throw (SPDT) switch employing a traveling-wave concept with absorptive characteristic is presented. The switch uses absorptive sections for better impedance matching in all ports. The switch obtained good linearity with the insertion loss of 3.2 dB, more than 28-dB isolation, and the return losses at all the ports are larger than 8.1 dB within the bandwidth of interest (36-38 GHz). The switch was fabricated by using GaAs 0.15-μm process. The chip area is very compact, just about 1 mm × 1.1 mm, including all the pads. To our best knowledge, this is the first GaAs MMIC traveling-wave switch type that has the absorptive characteristic.

Original languageEnglish
Article number8720036
Pages (from-to)394-396
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume29
Issue number6
DOIs
Publication statusPublished - 1 Jun 2019

Keywords

  • Absorptive switch
  • GaAs 015-μm process
  • passive HEMTs
  • single-pole double-throw (SPDT) monolithic microwave integrated circuit (MMIC) switch
  • traveling wave

Cite this

Trinh, Kim Tuyen ; Kao, Hsuan Ling ; Chiu, Hsien Chin ; Karmakar, Nemai Chandra. / A Ka-band GaAs MMIC traveling-wave switch with absorptive characteristic. In: IEEE Microwave and Wireless Components Letters. 2019 ; Vol. 29, No. 6. pp. 394-396.
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abstract = "A 36-38-GHz monolithic microwave integrated circuit (MMIC) single-pole double-throw (SPDT) switch employing a traveling-wave concept with absorptive characteristic is presented. The switch uses absorptive sections for better impedance matching in all ports. The switch obtained good linearity with the insertion loss of 3.2 dB, more than 28-dB isolation, and the return losses at all the ports are larger than 8.1 dB within the bandwidth of interest (36-38 GHz). The switch was fabricated by using GaAs 0.15-μm process. The chip area is very compact, just about 1 mm × 1.1 mm, including all the pads. To our best knowledge, this is the first GaAs MMIC traveling-wave switch type that has the absorptive characteristic.",
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A Ka-band GaAs MMIC traveling-wave switch with absorptive characteristic. / Trinh, Kim Tuyen; Kao, Hsuan Ling; Chiu, Hsien Chin; Karmakar, Nemai Chandra.

In: IEEE Microwave and Wireless Components Letters, Vol. 29, No. 6, 8720036, 01.06.2019, p. 394-396.

Research output: Contribution to journalArticleResearchpeer-review

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AB - A 36-38-GHz monolithic microwave integrated circuit (MMIC) single-pole double-throw (SPDT) switch employing a traveling-wave concept with absorptive characteristic is presented. The switch uses absorptive sections for better impedance matching in all ports. The switch obtained good linearity with the insertion loss of 3.2 dB, more than 28-dB isolation, and the return losses at all the ports are larger than 8.1 dB within the bandwidth of interest (36-38 GHz). The switch was fabricated by using GaAs 0.15-μm process. The chip area is very compact, just about 1 mm × 1.1 mm, including all the pads. To our best knowledge, this is the first GaAs MMIC traveling-wave switch type that has the absorptive characteristic.

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