A Ka-band GaAs MMIC traveling-wave switch with absorptive characteristic

Kim Tuyen Trinh; Hsuan Ling Kao; Hsien Chin Chiu; Nemai Chandra Karmakar

doi:10.1109/LMWC.2019.2913507

A Ka-band GaAs MMIC traveling-wave switch with absorptive characteristic

Kim Tuyen Trinh, Hsuan Ling Kao, Hsien Chin Chiu, Nemai Chandra Karmakar

Electrical and Computer Systems Engineering

Research output: Contribution to journal › Article › Research › peer-review

29 Citations (Scopus)

Abstract

A 36-38-GHz monolithic microwave integrated circuit (MMIC) single-pole double-throw (SPDT) switch employing a traveling-wave concept with absorptive characteristic is presented. The switch uses absorptive sections for better impedance matching in all ports. The switch obtained good linearity with the insertion loss of 3.2 dB, more than 28-dB isolation, and the return losses at all the ports are larger than 8.1 dB within the bandwidth of interest (36-38 GHz). The switch was fabricated by using GaAs 0.15-μm process. The chip area is very compact, just about 1 mm × 1.1 mm, including all the pads. To our best knowledge, this is the first GaAs MMIC traveling-wave switch type that has the absorptive characteristic.

Original language	English
Article number	8720036
Pages (from-to)	394-396
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	29
Issue number	6
DOIs	https://doi.org/10.1109/LMWC.2019.2913507
Publication status	Published - 1 Jun 2019

Keywords

Absorptive switch
GaAs 015-μm process
passive HEMTs
single-pole double-throw (SPDT) monolithic microwave integrated circuit (MMIC) switch
traveling wave

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10.1109/LMWC.2019.2913507

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title = "A Ka-band GaAs MMIC traveling-wave switch with absorptive characteristic",

abstract = "A 36-38-GHz monolithic microwave integrated circuit (MMIC) single-pole double-throw (SPDT) switch employing a traveling-wave concept with absorptive characteristic is presented. The switch uses absorptive sections for better impedance matching in all ports. The switch obtained good linearity with the insertion loss of 3.2 dB, more than 28-dB isolation, and the return losses at all the ports are larger than 8.1 dB within the bandwidth of interest (36-38 GHz). The switch was fabricated by using GaAs 0.15-μm process. The chip area is very compact, just about 1 mm × 1.1 mm, including all the pads. To our best knowledge, this is the first GaAs MMIC traveling-wave switch type that has the absorptive characteristic.",

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A Ka-band GaAs MMIC traveling-wave switch with absorptive characteristic

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Keywords

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