A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors

Satyaprasad P. Senanayak, Mojtaba Abdi-Jalebi, Varun S. Kamboj, Remington Carey, Ravichandran Shivanna, Tian Tian, Guillaume Schweicher, Junzhan Wang, Nadja Giesbrecht, Daniele Di Nuzzo, Harvey E. Beere, Pablo Docampo, David A. Ritchie, David Fairen-Jimenez, Richard H. Friend, Henning Sirringhaus

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120 Citations (Scopus)


Despite sustained research, application of lead halide perovskites in field-effect transistors (FETs) has substantial concerns in terms of operational instabilities and hysteresis effects which are linked to its ionic nature. Here, we investigate the mechanism behind these instabilities and demonstrate an effective route to suppress them to realize high-performance perovskite FETs with low hysteresis, high threshold voltage stability (ΔVt < 2 V over 10 hours of continuous operation), and high mobility values >1 cm2/V·s at room temperature. We show that multiple cation incorporation using strain-relieving cations like Cs and cations such as Rb, which act as passivation/crystallization modifying agents, is an effective strategy for reducing vacancy concentration and ion migration in perovskite FETs. Furthermore, we demonstrate that treatment of perovskite films with positive azeotrope solvents that act as Lewis bases (acids) enables a further reduction in defect density and substantial improvement in performance and stability of n-type (p-type) perovskite devices.

Original languageEnglish
Article numbereaaz4948
Number of pages13
JournalScience Advances
Issue number15
Publication statusPublished - 8 Apr 2020
Externally publishedYes

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