TY - JOUR
T1 - A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors
AU - Senanayak, Satyaprasad P.
AU - Abdi-Jalebi, Mojtaba
AU - Kamboj, Varun S.
AU - Carey, Remington
AU - Shivanna, Ravichandran
AU - Tian, Tian
AU - Schweicher, Guillaume
AU - Wang, Junzhan
AU - Giesbrecht, Nadja
AU - Di Nuzzo, Daniele
AU - Beere, Harvey E.
AU - Docampo, Pablo
AU - Ritchie, David A.
AU - Fairen-Jimenez, David
AU - Friend, Richard H.
AU - Sirringhaus, Henning
PY - 2020/4/8
Y1 - 2020/4/8
N2 - Despite sustained research, application of lead halide perovskites in field-effect transistors (FETs) has substantial concerns in terms of operational instabilities and hysteresis effects which are linked to its ionic nature. Here, we investigate the mechanism behind these instabilities and demonstrate an effective route to suppress them to realize high-performance perovskite FETs with low hysteresis, high threshold voltage stability (ΔVt < 2 V over 10 hours of continuous operation), and high mobility values >1 cm2/V·s at room temperature. We show that multiple cation incorporation using strain-relieving cations like Cs and cations such as Rb, which act as passivation/crystallization modifying agents, is an effective strategy for reducing vacancy concentration and ion migration in perovskite FETs. Furthermore, we demonstrate that treatment of perovskite films with positive azeotrope solvents that act as Lewis bases (acids) enables a further reduction in defect density and substantial improvement in performance and stability of n-type (p-type) perovskite devices.
AB - Despite sustained research, application of lead halide perovskites in field-effect transistors (FETs) has substantial concerns in terms of operational instabilities and hysteresis effects which are linked to its ionic nature. Here, we investigate the mechanism behind these instabilities and demonstrate an effective route to suppress them to realize high-performance perovskite FETs with low hysteresis, high threshold voltage stability (ΔVt < 2 V over 10 hours of continuous operation), and high mobility values >1 cm2/V·s at room temperature. We show that multiple cation incorporation using strain-relieving cations like Cs and cations such as Rb, which act as passivation/crystallization modifying agents, is an effective strategy for reducing vacancy concentration and ion migration in perovskite FETs. Furthermore, we demonstrate that treatment of perovskite films with positive azeotrope solvents that act as Lewis bases (acids) enables a further reduction in defect density and substantial improvement in performance and stability of n-type (p-type) perovskite devices.
UR - http://www.scopus.com/inward/record.url?scp=85083220535&partnerID=8YFLogxK
U2 - 10.1126/sciadv.aaz4948
DO - 10.1126/sciadv.aaz4948
M3 - Article
C2 - 32300658
AN - SCOPUS:85083220535
SN - 2375-2548
VL - 6
JO - Science Advances
JF - Science Advances
IS - 15
M1 - eaaz4948
ER -