A facile deposition method for CuSCN

exploring the influence of CuSCN on J-V hysteresis in planar perovskite solar cells

Gaveshana A Sepalage, Steffen Meyer, Alexander R. Pascoe, Andrew D Scully, Udo Bach, Yi-Bing Cheng, Leone Spiccia

Research output: Contribution to journalArticleResearchpeer-review

18 Citations (Scopus)

Abstract

Inorganic hole–transporting materials (HTMs) are a promising class of compounds for improving the long-term stability of perovskite solar cells. In this study, copper(I) thiocyanate (CuSCN) has been applied as an HTM in planar-structured thin film perovskite solar cells based on methylammonium lead(II) triiodide. A common obstacle associated with the deposition of inorganic HTMs in perovskite-based solar cell devices is the damaging effect of polar solvents, required during the solution-processed deposition step, on the underlying perovskite film. Here we describe a novel fabrication method that allows the deposition of a CuCSN layer on perovskite film, achieving a maximum power conversion efficiency of 9.6%. The magnitude of J-V hysteresis is found to be strongly dependent on the HTM used, with the phenomenon being much more prevalent in the CuSCN- and spiro-OMeTAD-based devices compared to CuI-based devices. Interestingly, CuSCN and CuI showed significantly different J-V hysteresis behaviors despite their similar physicochemical properties. Further characterization by open circuit voltage decay (OCVD) measurements revealed that the relaxation of the perovskite polarization depends on the light intensity and the adjacent HTM layer. We propose that the stronger J-V hysteresis in CuSCN compared to CuI is a result of defects generated during the deposition process and possible degradation at the material interfaces while other possibilities are also discussed.

Original languageEnglish
Pages (from-to)310-319
Number of pages10
JournalNano Energy
Volume32
DOIs
Publication statusPublished - 1 Feb 2017

Keywords

  • Copper(I) thiocyanate
  • Inorganic hole-conductors
  • J-V hysteresis
  • Perovskite solar cells
  • Solution processing

Cite this

Sepalage, Gaveshana A ; Meyer, Steffen ; Pascoe, Alexander R. ; Scully, Andrew D ; Bach, Udo ; Cheng, Yi-Bing ; Spiccia, Leone. / A facile deposition method for CuSCN : exploring the influence of CuSCN on J-V hysteresis in planar perovskite solar cells. In: Nano Energy. 2017 ; Vol. 32. pp. 310-319.
@article{90939812e513479cbc3d4c4232b10cb7,
title = "A facile deposition method for CuSCN: exploring the influence of CuSCN on J-V hysteresis in planar perovskite solar cells",
abstract = "Inorganic hole–transporting materials (HTMs) are a promising class of compounds for improving the long-term stability of perovskite solar cells. In this study, copper(I) thiocyanate (CuSCN) has been applied as an HTM in planar-structured thin film perovskite solar cells based on methylammonium lead(II) triiodide. A common obstacle associated with the deposition of inorganic HTMs in perovskite-based solar cell devices is the damaging effect of polar solvents, required during the solution-processed deposition step, on the underlying perovskite film. Here we describe a novel fabrication method that allows the deposition of a CuCSN layer on perovskite film, achieving a maximum power conversion efficiency of 9.6{\%}. The magnitude of J-V hysteresis is found to be strongly dependent on the HTM used, with the phenomenon being much more prevalent in the CuSCN- and spiro-OMeTAD-based devices compared to CuI-based devices. Interestingly, CuSCN and CuI showed significantly different J-V hysteresis behaviors despite their similar physicochemical properties. Further characterization by open circuit voltage decay (OCVD) measurements revealed that the relaxation of the perovskite polarization depends on the light intensity and the adjacent HTM layer. We propose that the stronger J-V hysteresis in CuSCN compared to CuI is a result of defects generated during the deposition process and possible degradation at the material interfaces while other possibilities are also discussed.",
keywords = "Copper(I) thiocyanate, Inorganic hole-conductors, J-V hysteresis, Perovskite solar cells, Solution processing",
author = "Sepalage, {Gaveshana A} and Steffen Meyer and Pascoe, {Alexander R.} and Scully, {Andrew D} and Udo Bach and Yi-Bing Cheng and Leone Spiccia",
year = "2017",
month = "2",
day = "1",
doi = "10.1016/j.nanoen.2016.12.043",
language = "English",
volume = "32",
pages = "310--319",
journal = "Nano Energy",
issn = "2211-2855",
publisher = "Elsevier",

}

A facile deposition method for CuSCN : exploring the influence of CuSCN on J-V hysteresis in planar perovskite solar cells. / Sepalage, Gaveshana A; Meyer, Steffen; Pascoe, Alexander R.; Scully, Andrew D; Bach, Udo; Cheng, Yi-Bing; Spiccia, Leone.

In: Nano Energy, Vol. 32, 01.02.2017, p. 310-319.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - A facile deposition method for CuSCN

T2 - exploring the influence of CuSCN on J-V hysteresis in planar perovskite solar cells

AU - Sepalage, Gaveshana A

AU - Meyer, Steffen

AU - Pascoe, Alexander R.

AU - Scully, Andrew D

AU - Bach, Udo

AU - Cheng, Yi-Bing

AU - Spiccia, Leone

PY - 2017/2/1

Y1 - 2017/2/1

N2 - Inorganic hole–transporting materials (HTMs) are a promising class of compounds for improving the long-term stability of perovskite solar cells. In this study, copper(I) thiocyanate (CuSCN) has been applied as an HTM in planar-structured thin film perovskite solar cells based on methylammonium lead(II) triiodide. A common obstacle associated with the deposition of inorganic HTMs in perovskite-based solar cell devices is the damaging effect of polar solvents, required during the solution-processed deposition step, on the underlying perovskite film. Here we describe a novel fabrication method that allows the deposition of a CuCSN layer on perovskite film, achieving a maximum power conversion efficiency of 9.6%. The magnitude of J-V hysteresis is found to be strongly dependent on the HTM used, with the phenomenon being much more prevalent in the CuSCN- and spiro-OMeTAD-based devices compared to CuI-based devices. Interestingly, CuSCN and CuI showed significantly different J-V hysteresis behaviors despite their similar physicochemical properties. Further characterization by open circuit voltage decay (OCVD) measurements revealed that the relaxation of the perovskite polarization depends on the light intensity and the adjacent HTM layer. We propose that the stronger J-V hysteresis in CuSCN compared to CuI is a result of defects generated during the deposition process and possible degradation at the material interfaces while other possibilities are also discussed.

AB - Inorganic hole–transporting materials (HTMs) are a promising class of compounds for improving the long-term stability of perovskite solar cells. In this study, copper(I) thiocyanate (CuSCN) has been applied as an HTM in planar-structured thin film perovskite solar cells based on methylammonium lead(II) triiodide. A common obstacle associated with the deposition of inorganic HTMs in perovskite-based solar cell devices is the damaging effect of polar solvents, required during the solution-processed deposition step, on the underlying perovskite film. Here we describe a novel fabrication method that allows the deposition of a CuCSN layer on perovskite film, achieving a maximum power conversion efficiency of 9.6%. The magnitude of J-V hysteresis is found to be strongly dependent on the HTM used, with the phenomenon being much more prevalent in the CuSCN- and spiro-OMeTAD-based devices compared to CuI-based devices. Interestingly, CuSCN and CuI showed significantly different J-V hysteresis behaviors despite their similar physicochemical properties. Further characterization by open circuit voltage decay (OCVD) measurements revealed that the relaxation of the perovskite polarization depends on the light intensity and the adjacent HTM layer. We propose that the stronger J-V hysteresis in CuSCN compared to CuI is a result of defects generated during the deposition process and possible degradation at the material interfaces while other possibilities are also discussed.

KW - Copper(I) thiocyanate

KW - Inorganic hole-conductors

KW - J-V hysteresis

KW - Perovskite solar cells

KW - Solution processing

UR - http://www.scopus.com/inward/record.url?scp=85008324917&partnerID=8YFLogxK

U2 - 10.1016/j.nanoen.2016.12.043

DO - 10.1016/j.nanoen.2016.12.043

M3 - Article

VL - 32

SP - 310

EP - 319

JO - Nano Energy

JF - Nano Energy

SN - 2211-2855

ER -