A 1–11 GHz ultra-wideband LNA using M-derived inductive peaking circuit in UMC 65 nm CMOS

A high-gain, low-power, and low-noise amplifier (LNA) is designed in UMC 65 nm radio frequency (RF)-CMOS technology for operation over the 1 to 11 GHz RF band. This LNA design is based on an m-derived inductive peaking circuit with a shunt feedback inverter. The m-derived inductive peaking circuit is placed between two shunt feedback inverters. Further, a split inductor topology is introduced in the circuit. The procedure for the integrating of an m-derived inductive peaking circuit in LNA is explained in detail. The proposed circuit achieves more than 14 dB of power gain over an ultra-wideband of 1 to 11 GHz. The measurement of the proposed LNA achieves a minimum of 2.5 dB of noise figure, and more than −8 dBm of third-order input intercept point, while consuming 11.3 mW of power.