A 1–11 GHz ultra-wideband LNA using M-derived inductive peaking circuit in UMC 65 nm CMOS

Darshak Bhatt, Jayanta Mukherjee, Jean-Michel Redoute

Research output: Contribution to journalArticleResearchpeer-review

Abstract

A high-gain, low-power, and low-noise amplifier (LNA) is designed in UMC 65 nm radio frequency (RF)-CMOS technology for operation over the 1 to 11 GHz RF band. This LNA design is based on an m-derived inductive peaking circuit with a shunt feedback inverter. The m-derived inductive peaking circuit is placed between two shunt feedback inverters. Further, a split inductor topology is introduced in the circuit. The procedure for the integrating of an m-derived inductive peaking circuit in LNA is explained in detail. The proposed circuit achieves more than 14 dB of power gain over an ultra-wideband of 1 to 11 GHz. The measurement of the proposed LNA achieves a minimum of 2.5 dB of noise figure, and more than −8 dBm of third-order input intercept point, while consuming 11.3 mW of power. 

Original languageEnglish
Pages (from-to)521-526
Number of pages6
JournalMicrowave and Optical Technology Letters
Volume59
Issue number3
DOIs
Publication statusPublished - 1 Mar 2017

Keywords

  • inductive peaking
  • low-noise amplifier
  • m-derived circuit
  • ultra-wideband

Cite this

Bhatt, Darshak ; Mukherjee, Jayanta ; Redoute, Jean-Michel. / A 1–11 GHz ultra-wideband LNA using M-derived inductive peaking circuit in UMC 65 nm CMOS. In: Microwave and Optical Technology Letters. 2017 ; Vol. 59, No. 3. pp. 521-526.
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A 1–11 GHz ultra-wideband LNA using M-derived inductive peaking circuit in UMC 65 nm CMOS. / Bhatt, Darshak ; Mukherjee, Jayanta; Redoute, Jean-Michel.

In: Microwave and Optical Technology Letters, Vol. 59, No. 3, 01.03.2017, p. 521-526.

Research output: Contribution to journalArticleResearchpeer-review

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