3D Nanostructuring of hydrogen silsesquioxane resist by 100 keV electron beam lithography

Joan Vila-Comamala, Sergey Gorelick, Vitaliy A. Guzenko, Christian David

Research output: Contribution to journalArticleResearchpeer-review

17 Citations (Scopus)


The authors investigated the three-dimensional nanostructuring of hydrogen silsesquioxane (HSQ) resist by multiple-step 100 keV electron beam lithography. Consecutive overlay exposures were used to create two- and three-levels in high aspect ratio HSQ structures with lateral dimensions down to 30 nm and resist thicknesses of about 1 μm. The HSQ resist was developed by a high contrast solution and supercritically dried in a carbon dioxide environment after each exposure step. The three-dimensional HSQ patterning has potential applications in the fabrication of performance enhanced devices such as photonic crystals, nanoelectromechanical systems, and diffractive X-ray lenses.

Original languageEnglish
Article number06F301
JournalJournal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics
Issue number6
Publication statusPublished - 1 Jan 2011
Externally publishedYes

Cite this