3D Nanostructuring of hydrogen silsesquioxane resist by 100 keV electron beam lithography

Joan Vila-Comamala; Sergey Gorelick; Vitaliy A. Guzenko; Christian David

doi:10.1116/1.3629811

3D Nanostructuring of hydrogen silsesquioxane resist by 100 keV electron beam lithography

Joan Vila-Comamala, Sergey Gorelick, Vitaliy A. Guzenko, Christian David

Research output: Contribution to journal › Article › Research › peer-review

17 Citations (Scopus)

Abstract

The authors investigated the three-dimensional nanostructuring of hydrogen silsesquioxane (HSQ) resist by multiple-step 100 keV electron beam lithography. Consecutive overlay exposures were used to create two- and three-levels in high aspect ratio HSQ structures with lateral dimensions down to 30 nm and resist thicknesses of about 1 μm. The HSQ resist was developed by a high contrast solution and supercritically dried in a carbon dioxide environment after each exposure step. The three-dimensional HSQ patterning has potential applications in the fabrication of performance enhanced devices such as photonic crystals, nanoelectromechanical systems, and diffractive X-ray lenses.

Original language	English
Article number	06F301
Journal	Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics
Volume	29
Issue number	6
DOIs	https://doi.org/10.1116/1.3629811
Publication status	Published - 1 Jan 2011
Externally published	Yes

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abstract = "The authors investigated the three-dimensional nanostructuring of hydrogen silsesquioxane (HSQ) resist by multiple-step 100 keV electron beam lithography. Consecutive overlay exposures were used to create two- and three-levels in high aspect ratio HSQ structures with lateral dimensions down to 30 nm and resist thicknesses of about 1 μm. The HSQ resist was developed by a high contrast solution and supercritically dried in a carbon dioxide environment after each exposure step. The three-dimensional HSQ patterning has potential applications in the fabrication of performance enhanced devices such as photonic crystals, nanoelectromechanical systems, and diffractive X-ray lenses.",

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AB - The authors investigated the three-dimensional nanostructuring of hydrogen silsesquioxane (HSQ) resist by multiple-step 100 keV electron beam lithography. Consecutive overlay exposures were used to create two- and three-levels in high aspect ratio HSQ structures with lateral dimensions down to 30 nm and resist thicknesses of about 1 μm. The HSQ resist was developed by a high contrast solution and supercritically dried in a carbon dioxide environment after each exposure step. The three-dimensional HSQ patterning has potential applications in the fabrication of performance enhanced devices such as photonic crystals, nanoelectromechanical systems, and diffractive X-ray lenses.

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3D Nanostructuring of hydrogen silsesquioxane resist by 100 keV electron beam lithography

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