We have used scanning transmission electron microscopy (STEM) tomography to reconstruct the three-dimensional structure and composition of a Si/Ge quantum dot. The optimum 3D probe was evaluated using simulation and experimental defocus series of probe images. The fidelity of the quantum dot reconstruction was slightly hampered by contamination but these initial experiments show how STEM electron tomography can examine quantum dot structures with 1 nm3 3D resolution.
|Title of host publication||Microscopy of Semiconducting Materials 2003|
|Number of pages||4|
|ISBN (Print)||0750309792, 9781315895536|
|Publication status||Published - 2003|