3D analysis of semiconductor structures using STEM tomography

T. J.V. Yates, M. Weyland, L. Laffont, D. Zhi, R. E. Dunin-Borkowski, P. A. Midgley

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

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Abstract

We have used scanning transmission electron microscopy (STEM) tomography to reconstruct the three-dimensional structure and composition of a Si/Ge quantum dot. The optimum 3D probe was evaluated using simulation and experimental defocus series of probe images. The fidelity of the quantum dot reconstruction was slightly hampered by contamination but these initial experiments show how STEM electron tomography can examine quantum dot structures with 1 nm3 3D resolution.

Original languageEnglish
Title of host publicationMicroscopy of Semiconducting Materials 2003
PublisherCRC Press
Pages541-544
Number of pages4
ISBN (Electronic)9781351083089
ISBN (Print)0750309792, 9781315895536
DOIs
Publication statusPublished - 2003
Externally publishedYes

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