3D analysis of semiconductor structures using STEM tomography

T. J.V. Yates; M. Weyland; L. Laffont; D. Zhi; R. E. Dunin-Borkowski; P. A. Midgley

doi:10.1201/9781351074636

3D analysis of semiconductor structures using STEM tomography

T. J.V. Yates, M. Weyland, L. Laffont, D. Zhi, R. E. Dunin-Borkowski, P. A. Midgley

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Research › peer-review

1 Citation (Scopus)

Abstract

We have used scanning transmission electron microscopy (STEM) tomography to reconstruct the three-dimensional structure and composition of a Si/Ge quantum dot. The optimum 3D probe was evaluated using simulation and experimental defocus series of probe images. The fidelity of the quantum dot reconstruction was slightly hampered by contamination but these initial experiments show how STEM electron tomography can examine quantum dot structures with 1 nm³ 3D resolution.

Original language	English
Title of host publication	Microscopy of Semiconducting Materials 2003
Publisher	CRC Press
Pages	541-544
Number of pages	4
ISBN (Electronic)	9781351083089
ISBN (Print)	0750309792, 9781315895536
DOIs	https://doi.org/10.1201/9781351074636
Publication status	Published - 2003
Externally published	Yes

Access to Document

10.1201/9781351074636

Link to publication in Scopus

Cite this

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title = "3D analysis of semiconductor structures using STEM tomography",

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AB - We have used scanning transmission electron microscopy (STEM) tomography to reconstruct the three-dimensional structure and composition of a Si/Ge quantum dot. The optimum 3D probe was evaluated using simulation and experimental defocus series of probe images. The fidelity of the quantum dot reconstruction was slightly hampered by contamination but these initial experiments show how STEM electron tomography can examine quantum dot structures with 1 nm3 3D resolution.

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