3D analysis of semiconductor structures using HAADF STEM tomography

T. J.V. Yates, L. Laffont, M. Weyland, D. Zhi, P. A. Midgley

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The high spatial resolution and atomic number contrast available using high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) tomography makes it an ideal technique for the 3D analysis of physical science specimens and of semiconductors in particular. In this work, we have begun to apply this form of tomography to investigate Si/Ge quantum dots to reveal their 3D morphology (in order to identify the major growth facets) and, in the longer term, to reveal the 3D distribution of Si and Ge within the dot itself.

Original languageEnglish
Pages (from-to)31-34
Number of pages4
JournalInstitute of Physics Conference Series
Publication statusPublished - 19 Oct 2004
Externally publishedYes
EventElectron Microscopy and Analysis 2003 - Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference - Oxford, United Kingdom
Duration: 3 Sep 20035 Sep 2003

Cite this

Yates, T. J. V., Laffont, L., Weyland, M., Zhi, D., & Midgley, P. A. (2004). 3D analysis of semiconductor structures using HAADF STEM tomography. Institute of Physics Conference Series, 179, 31-34.