The high spatial resolution and atomic number contrast available using high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) tomography makes it an ideal technique for the 3D analysis of physical science specimens and of semiconductors in particular. In this work, we have begun to apply this form of tomography to investigate Si/Ge quantum dots to reveal their 3D morphology (in order to identify the major growth facets) and, in the longer term, to reveal the 3D distribution of Si and Ge within the dot itself.
|Number of pages||4|
|Journal||Institute of Physics Conference Series|
|Publication status||Published - 19 Oct 2004|
|Event||Electron Microscopy and Analysis 2003 - Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference - Oxford, United Kingdom|
Duration: 3 Sep 2003 → 5 Sep 2003