2D Binary Plasmonic Nanoassemblies with Semiconductor n/p-Doping-Like Properties

Qianqian Shi, Debabrata Sikdar, Runfang Fu, Kae Jye Si, Dashen Dong, Yiyi Liu, Malin Premaratne, Wenlong Cheng

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12 Citations (Scopus)


The electronic, optical, thermal, and magnetic properties of an extrinsic bulk semiconductor can be finely tuned by adjusting its dopant concentration. Here, it is demonstrated that such a doping concept can be extended to plasmonic nanomaterials. Using two-dimensional (2D) assemblies of Au@Ag and Au nanocubes (NCs) as a model system, detailed experimental and theoretical studies are carried out, which reveal collective semiconductor n/p-doping-like plasmonic properties. A threshold doping concentration of Au@Ag NCs is observed, below which p-doping dominates and above which n-doping prevails. Furthermore, Au@Ag NC dopants can be converted into corresponding Au seed “voids” dopants by selectively removing Ag without changing the overall structural integrity. The results show that the plasmonic doping concept may serve as a general design principle guiding synthesis and assembly of plasmonic metamaterials for programmable optoelectronic devices.

Original languageEnglish
Article number1801118
Number of pages6
JournalAdvanced Materials
Issue number26
Publication statusPublished - 27 Jun 2018


  • 2D
  • assemblies
  • binary
  • doping
  • plasmonic

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