Abstract
The electronic, optical, thermal, and magnetic properties of an extrinsic bulk semiconductor can be finely tuned by adjusting its dopant concentration. Here, it is demonstrated that such a doping concept can be extended to plasmonic nanomaterials. Using two-dimensional (2D) assemblies of Au@Ag and Au nanocubes (NCs) as a model system, detailed experimental and theoretical studies are carried out, which reveal collective semiconductor n/p-doping-like plasmonic properties. A threshold doping concentration of Au@Ag NCs is observed, below which p-doping dominates and above which n-doping prevails. Furthermore, Au@Ag NC dopants can be converted into corresponding Au seed “voids” dopants by selectively removing Ag without changing the overall structural integrity. The results show that the plasmonic doping concept may serve as a general design principle guiding synthesis and assembly of plasmonic metamaterials for programmable optoelectronic devices.
| Original language | English |
|---|---|
| Article number | 1801118 |
| Number of pages | 6 |
| Journal | Advanced Materials |
| Volume | 30 |
| Issue number | 26 |
| DOIs | |
| Publication status | Published - 27 Jun 2018 |
Keywords
- 2D
- assemblies
- binary
- doping
- plasmonic
Cite this
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2D Binary Plasmonic Nanoassemblies with Semiconductor n/p-Doping-Like Properties. / Shi, Qianqian; Sikdar, Debabrata; Fu, Runfang; Si, Kae Jye; Dong, Dashen; Liu, Yiyi; Premaratne, Malin; Cheng, Wenlong.
In: Advanced Materials, Vol. 30, No. 26, 1801118, 27.06.2018.Research output: Contribution to journal › Article › Research › peer-review
TY - JOUR
T1 - 2D Binary Plasmonic Nanoassemblies with Semiconductor n/p-Doping-Like Properties
AU - Shi, Qianqian
AU - Sikdar, Debabrata
AU - Fu, Runfang
AU - Si, Kae Jye
AU - Dong, Dashen
AU - Liu, Yiyi
AU - Premaratne, Malin
AU - Cheng, Wenlong
PY - 2018/6/27
Y1 - 2018/6/27
N2 - The electronic, optical, thermal, and magnetic properties of an extrinsic bulk semiconductor can be finely tuned by adjusting its dopant concentration. Here, it is demonstrated that such a doping concept can be extended to plasmonic nanomaterials. Using two-dimensional (2D) assemblies of Au@Ag and Au nanocubes (NCs) as a model system, detailed experimental and theoretical studies are carried out, which reveal collective semiconductor n/p-doping-like plasmonic properties. A threshold doping concentration of Au@Ag NCs is observed, below which p-doping dominates and above which n-doping prevails. Furthermore, Au@Ag NC dopants can be converted into corresponding Au seed “voids” dopants by selectively removing Ag without changing the overall structural integrity. The results show that the plasmonic doping concept may serve as a general design principle guiding synthesis and assembly of plasmonic metamaterials for programmable optoelectronic devices.
AB - The electronic, optical, thermal, and magnetic properties of an extrinsic bulk semiconductor can be finely tuned by adjusting its dopant concentration. Here, it is demonstrated that such a doping concept can be extended to plasmonic nanomaterials. Using two-dimensional (2D) assemblies of Au@Ag and Au nanocubes (NCs) as a model system, detailed experimental and theoretical studies are carried out, which reveal collective semiconductor n/p-doping-like plasmonic properties. A threshold doping concentration of Au@Ag NCs is observed, below which p-doping dominates and above which n-doping prevails. Furthermore, Au@Ag NC dopants can be converted into corresponding Au seed “voids” dopants by selectively removing Ag without changing the overall structural integrity. The results show that the plasmonic doping concept may serve as a general design principle guiding synthesis and assembly of plasmonic metamaterials for programmable optoelectronic devices.
KW - 2D
KW - assemblies
KW - binary
KW - doping
KW - plasmonic
UR - http://www.scopus.com/inward/record.url?scp=85047536003&partnerID=8YFLogxK
U2 - 10.1002/adma.201801118
DO - 10.1002/adma.201801118
M3 - Article
VL - 30
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 26
M1 - 1801118
ER -