TY - JOUR
T1 - 2024 roadmap on 2D topological insulators
AU - Weber, Bent
AU - Fuhrer, Michael S.
AU - Sheng, Xian Lei
AU - Yang, Shengyuan A.
AU - Thomale, Ronny
AU - Shamim, Saquib
AU - Molenkamp, Laurens W.
AU - Cobden, David
AU - Pesin, Dmytro
AU - Zandvliet, Harold J.W.
AU - Bampoulis, Pantelis
AU - Claessen, Ralph
AU - Menges, Fabian R.
AU - Gooth, Johannes
AU - Felser, Claudia
AU - Shekhar, Chandra
AU - Tadich, Anton
AU - Zhao, Mengting
AU - Edmonds, Mark T.
AU - Jia, Junxiang
AU - Bieniek, Maciej
AU - Väyrynen, Jukka I.
AU - Culcer, Dimitrie
AU - Muralidharan, Bhaskaran
AU - Nadeem, Muhammad
N1 - Funding Information:
The planning of this roadmap project was supported by the National Research Foundation (NRF) Singapore, under the Competitive Research Programme ‘Towards On-Chip Topological Quantum Devices’ (NRF-CRP21-2018-0001) with further support from the Singapore Ministry of Education (MOE) Academic Research Fund Tier 3 Grant (MOE2018-T3-1-002) ‘Geometrical Quantum Materials’, and a Singapore MOE AcRF Tier 2 (MOE-T2EP50220-0011). M S F acknowledges support of the ARC Centre of Excellence in Future Low-Energy Electronics Technologies (CE170100039). B W acknowledges a Singapore National Research Foundation (NRF) Fellowship (NRF-NRFF2017-11).
Funding Information:
The authors thank D L Deng for valuable discussions. This work was supported by Singapore MOE AcRF Tier 2 (Grant No. MOE-T2EP50220-0011), National Key R&D Program of China (No. 2022YFA1402600) and NSFC (Grant No. 12174018).
Funding Information:
R T is funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) through Project-ID 258499086—SFB 1170, the Würzburg–Dresden Cluster of Excellence on Complexity and Topology in Quantum Matter-ct.qmat Project-ID 390858490—EXC 2147, and FOR QUAST 5249-449872909 (Project P3).
Funding Information:
I wish to thank all coauthors of [, , , –, ] for the fruitful collaboration, and especially R Stühler for his central contributions. Key funding from the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany’s Excellence Strategy through the Würzburg–Dresden Cluster of Excellence EXC 2147 on Complexity and Topology in Quantum Matter ct.qmat (project ID 390858490) as well as through the Collaborative Research Center SFB 1170 ToCoTronics (project ID 258499086) is gratefully acknowledged.
Funding Information:
This work was financially supported by the Deutsche Forschungsgemeinschaft (DFG) under SFB1143 (Project No. 247310070) and the Würzburg–Dresden Cluster of Excellence on Complexity and Topology in Quantum Matter—ct.qmat (EXC 2147, Project No. 390858490).
Funding Information:
M T E acknowledges funding from the Australian Research Council Future Fellowship program (FT220100290). M Z acknowledges funding from the ANSTO Postgraduate Fellowship. M T E, M Z and A T acknowledge support from the ARC Centre for Excellence Future Low Energy Electronic Technologies (FLEET) (CE1700100039).
Funding Information:
This research is supported by the National Research Foundation (NRF) Singapore, under the Competitive Research Programme ‘Towards On-Chip Topological Quantum Devices’ (NRF-CRP212018-0001) with further support from the Singapore Ministry of Education (MOE) Academic Research Fund Tier 3 Grant (MOE2018-T3-1-002) ‘Geometrical Quantum Materials’. B W acknowledges a Singapore National Research Foundation (NRF) Fellowship (NRF-NRFF2017-11).
Funding Information:
We acknowledge support from the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) through QUAST FOR 5249-449872909 (Project P3). The work in Würzburg is further supported by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) through Project-ID 258499086-SFB 1170 and the Würzburg–Dresden Cluster of Excellence on Complexity and Topology in Quantum Matter—ct.qmat Project-ID 390858490-EXC 2147. J I V acknowledges support by the US Department of Energy (DOE) Office of Science through the Quantum Science Center (QSC, a National Quantum Information Science Research Center.
Funding Information:
M S F, D C, and M N are supported in part by the ARC Centre of Excellence in Future Low-Energy Electronics Technologies (CE170100039).
Funding Information:
We gratefully acknowledge the co-authors of the papers which were discussed. We acknowledge the Visvesvaraya PhD. Scheme of the Ministry of Electronics and Information Technology (MEITY), Government of India, the Science and Engineering Research Board (SERB), Government of India, Grant No. CRG/2021/003102, the Ministry of Education (MoE), Government of India, Grant No. STARS/APR2019/NS/226/FS under the STARS scheme.
Publisher Copyright:
© 2024 The Author(s). Published by IOP Publishing Ltd.
PY - 2024/4/1
Y1 - 2024/4/1
N2 - 2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the existence of 1D spin-momentum locked metallic edge states—both helical and chiral—surrounding an electrically insulating bulk. Forty years since the first discoveries of topological phases in condensed matter, the abstract concept of band topology has sprung into realization with several materials now available in which sizable bulk energy gaps—up to a few hundred meV—promise to enable topology for applications even at room-temperature. Further, the possibility of combining 2D TIs in heterostructures with functional materials such as multiferroics, ferromagnets, and superconductors, vastly extends the range of applicability beyond their intrinsic properties. While 2D TIs remain a unique testbed for questions of fundamental condensed matter physics, proposals seek to control the topologically protected bulk or boundary states electrically, or even induce topological phase transitions to engender switching functionality. Induction of superconducting pairing in 2D TIs strives to realize non-Abelian quasiparticles, promising avenues towards fault-tolerant topological quantum computing. This roadmap aims to present a status update of the field, reviewing recent advances and remaining challenges in theoretical understanding, materials synthesis, physical characterization and, ultimately, device perspectives.
AB - 2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the existence of 1D spin-momentum locked metallic edge states—both helical and chiral—surrounding an electrically insulating bulk. Forty years since the first discoveries of topological phases in condensed matter, the abstract concept of band topology has sprung into realization with several materials now available in which sizable bulk energy gaps—up to a few hundred meV—promise to enable topology for applications even at room-temperature. Further, the possibility of combining 2D TIs in heterostructures with functional materials such as multiferroics, ferromagnets, and superconductors, vastly extends the range of applicability beyond their intrinsic properties. While 2D TIs remain a unique testbed for questions of fundamental condensed matter physics, proposals seek to control the topologically protected bulk or boundary states electrically, or even induce topological phase transitions to engender switching functionality. Induction of superconducting pairing in 2D TIs strives to realize non-Abelian quasiparticles, promising avenues towards fault-tolerant topological quantum computing. This roadmap aims to present a status update of the field, reviewing recent advances and remaining challenges in theoretical understanding, materials synthesis, physical characterization and, ultimately, device perspectives.
KW - 2D topological insulators
KW - condensed matter
KW - quantum spin Hall materials
KW - scanning tunneling microscopy
KW - semiconductor heterostructures
KW - topological electronics
KW - tungsten ditelluride
UR - http://www.scopus.com/inward/record.url?scp=85187201062&partnerID=8YFLogxK
U2 - 10.1088/2515-7639/ad2083
DO - 10.1088/2515-7639/ad2083
M3 - Review Article
AN - SCOPUS:85187201062
SN - 2515-7639
VL - 7
JO - Journal of Physics: Materials
JF - Journal of Physics: Materials
IS - 2
M1 - 022501
ER -