Silicon based transistor technology is approaching the hard limit of efficiency set by thermodynamics, requiring
new materials to be found that possess electronic properties that break away from conventional transistor
technology. Utilising a new facility being installed by the applicant at the Australian Synchrotron, this project aims
to prepare and characterise the electronic properties of free-standing atomically thin bismuth; a novel twodimensional
electronic material predicted to allow charge to be transported without dissipation at room
temperature. Successful realisation of this project will provide a radical new approach towards realising more
efficient electronic devices for the storage and transmission of energy.