We will address a major problem in nanoscience, namely how to assemble and position nanoscale structures on surfaces in parallel. Our approach is based on the physics of GaAs Langmuir evaporation above the congruent temperature and has arisen from our recent fundamental imaging studies of GaAs decomposition using the Monash III-V Low Energy Electron Microscope. Conventional lithography will be used to pattern areas for preferential Ga droplet formation which can be transformed into quantum structures using standard droplet epitaxy techniques. The method is cost-effective and directly compatible with III-V semiconductor fabrication. The approach has the potential to revolutionise optoelectronics, quantum computing and quantum cryptography.
|Effective start/end date
|5/01/09 → 1/07/12
- Australian Research Council (ARC): A$300,000.00