New experimental-analytical x-ray diffraction technique for unambiguous non-destructive characterization of high-performance silicon-germanium-carbon alloys for broadband communication devices

This research will develop a new x-ray diffraction technique for characterization of silicon-germanium-carbon semiconductor alloys. These are the basis for the new generation, ultra-high speed broadband telecommunication devices. The research will establish a new theoretical methodology for fundamental studies of x-ray scattering phenomena in compound strain-compensated materials. The experiments will be carried out using the state-of-the-art laboratory and synchrotron radiation facilities in Australia, Japan and France. The project involves direct collaboration with IHP Germany, the world-leading semiconductor developer. Highly qualified postgraduate students will be extensively trained in modern synchrotron experiments, x-ray diffraction theory and semiconductor technology during the project.